Project Description

Freestanding Gallium Nitride Substrate


EPRUI has become the overseas distributor of China’s top gallium nitride (GaN) wafer manufacturer.

Our freestanding GaN substrate is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology, Our GaN substrate wafer has low defect density and less or free macro defect density. We can now supply 2 inch,3 inch and 4 inch freestanding gallium nitride wafer for your choice.

2” Freestanding GaN substrate

Gallium Nitride Powder

According to conduction type, there are undoped, Ge doped, semi insulating Fe doped type.


Conduction TypeU-type(Undoped)N-type(Ge-doped)Semi Insulating(Fe-doped)
Resistivity(300K)< 0.5 Ω·cm< 0.05 Ω·cm>106 Ω·cm
Dislocation Density1~9x105cm-25x105 cm-21~9x105 cm-2
1~3x106 cm-2~3x106 cm-21~3x106 cm
DimensionФ 50.8 mm ± 1 mm
Thickness350 ± 25 µm
Useable Surface Area> 90%
OrientationC-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat(11-20) ± 3°, 8.0 ± 1.0 mm
TTV(Total Thickness Variation)≤ 15 µm
BOW≤ 20 µm
PolishingFront Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere
3 inch and 4 inch Freestanding GaN substrate can also be customized.

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