EPRUI has become the overseas distributor of China’s top gallium nitride (GaN) wafer manufacturer.
Our freestanding GaN substrate is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology, Our GaN substrate wafer has low defect density and less or free macro defect density. We can now supply 2 inch,3 inch and 4 inch freestanding gallium nitride wafer for your choice.
2” Freestanding GaN substrate
According to conduction type, there are undoped, Ge doped, semi insulating Fe doped type.
|Conduction Type||U-type(Undoped)||N-type(Ge-doped)||Semi Insulating(Fe-doped)|
|Resistivity(300K)||< 0.5 Ω·cm||< 0.05 Ω·cm||>106 Ω·cm|
|Dislocation Density||1~9x105cm-2||5x105 cm-2||1~9x105 cm-2|
|1~3x106 cm-2||~3x106 cm-2||1~3x106 cm|
|Dimension||Ф 50.8 mm ± 1 mm|
|Thickness||350 ± 25 µm|
|Useable Surface Area||> 90%|
|Orientation||C-plane (0001) off angle toward M-Axis 0.35°± 0.15°|
|Orientation Flat||(1-100) ± 0.5°, 16.0 ± 1.0 mm|
|Secondary Orientation Flat||(11-20) ± 3°, 8.0 ± 1.0 mm|
|TTV(Total Thickness Variation)||≤ 15 µm|
|BOW||≤ 20 µm|
|Polishing||Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
|Package||Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere|
3 inch and 4 inch Freestanding GaN substrate can also be customized.