Gallium Nitride Powder

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN substrate makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Gallium Nitride is mainly used as a semiconductor material and fluorescent powder common in light-emitting diodes (LEDs) and purple laser diodes.It is also used for the preparation of high-power electronic devices,high-power microwave devices,and short wavelength light-emitting devices, such as blue LED, blue laser, UV detectors and so on.
Specification:

Gallium Nitride Powder

Molecular Formula

GaN

Molecular Weight

83.7297

Cas. No.

25617-97-4

EINECS No.

247-129-0

Purity

>99%

Chemical Stability

Very stable and do not react with aid, alkali water at room temperature

Preparation Method

Ammonia Method

Density

6.1g/cm3

Appearance

Light yellow powder

Particle Size

200 Mesh


Packing & Storage
Pack in aluminum foil bags and protect with nitrogen;
Store in nitrogen atmosphere if open the package.