Freestanding Gallium Nitride Substrate

free standing GaN substrate

EPRUI has become the overseas distributor of China's top gallium nitride (GaN) wafer manufacturer.
Our freestanding GaN substrate is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology, Our GaN substrate wafer has low defect density and less or free macro defect density. We can now supply 2 inch,3 inch and 4 inch freestanding gallium nitride wafer for your choice.
2” Freestanding GaN substrate
Gallium Nitride Powder
According to conduction type, there are undoped, Ge doped, semi insulating Fe doped type.

Item

GaN50-FS-U

GaN50-FS-N

GaN50-FS-SI

Conduction Type

U-type(Undoped)

N-type(Ge-doped)

Semi Insulating(Fe-doped)

Resistivity(300K)

< 0.5 Ω·cm

< 0.05 Ω·cm

>106 Ω·cm

Dislocation Density

1~9x105cm-2

5x105 cm-2

1~9x105 cm-2

1~3x106 cm-2

~3x106 cm-2

1~3x106 cm

Dimension

Ф 50.8 mm ± 1 mm

Thickness

350 ± 25 µm

Useable Surface Area

> 90%

Orientation

C-plane (0001) off angle toward M-Axis 0.35°± 0.15°

Orientation Flat

(1-100) ± 0.5°, 16.0 ± 1.0 mm

Secondary Orientation Flat

(11-20) ± 3°, 8.0 ± 1.0 mm

TTV
(Total Thickness Variation)

≤ 15 µm

BOW

≤ 20 µm

Polishing

Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground

Package

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere

3 inch and 4 inch Freestanding GaN substrate can also be customized.